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| MMBT6427 NPN Transistors Darlington Amplifier * We declare that the material of product compliance with RoHS requirements. COLLECTOR 3 BASE 1 P b Lead(Pb)-Free EMITTER 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO V alue 40 40 12 500 Unit Vdc Vdc Vdc mAdc 1 2 3 IC SOT-23 Max 225 1.8 556 300 Unit mW mW/C C/W mW mW/C C/W C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RJA PD RJA TJ , Tstg 2.4 417 -55 to +150 DEVICE MARKING MMBT6427 = 1V ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector-Base Breakdown Voltage (I C = 100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current (V CE V (BR)CEO V (BR)CBO V (BR)EBO 40 40 12 -- -- -- -- -- -- 1.0 50 50 V V V A nA nA = 25Vdc, I B = 0) I CES I CBO I EBO Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw 1/5 21-Dec-07 MMBT6427 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 10,000 20,000 14,000 VCE(sat)(3) -- -- V BE(sat) V BE(on) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100 mAdc, V CE = 5.0Vdc) (I C = 500 mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 50 mAdc, I B = 0.5 mAdc) (I C = 500 mAdc, I B = 0.5 mAdc) Base-Emitter Saturation Voltage (I C = 500 mAdc, I B = 0.5 mAdc) Base-Emitter On Voltage (I C = 50 mAdc, V CE = 5.0Vdc) 100,000 200,000 140,000 V 1.2 1.5 2.0 1.75 V V -- -- SMALL-SIGNAL CHARACTERISTICS Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Current Gain-High Frequency (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) (V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 k, f = 1.0 kHz ) C obo C ibo -- -- 1.3 -- 7.0 15 -- 10 pF pF V dB |h fe | NF Noise Finure 3. Pulse Tent: Pulse Width = 300s, Duty Cycle = 2.0% NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 500 RS in e n , VOLTAGE (nV) 200 100 BANDWIDTH = 1.0 Hz ~ R S~ 0 en IDEAL TRANSISTOR 10 A 50 100 A 20 I C = 1.0 mA 10 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k Figure 1. Transistor Noise Model f, FREQUENCY (Hz) Figure 2. Noise Voltage WEITRON http://www.weitron.com.tw 2/5 21-Dec-07 MMBT6427 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 2.0 1.0 200 BANDWIDTH = 1.0 Hz V T , TOTAL WIDEBAND NOISE VOLTAGE (nV) i n , NOISE CURRENT (pA) 0.7 0.5 0.3 0.2 100 70 50 30 20 BANDWIDTH = 10 Hz TO 15.7 kHz I C = 10 A I C = 1.0 mA 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 100 A 10 A 100 A 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 500 1k 2k 5k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 3. Noise Current 14 12 R S , SOURCE RESISTANCE (k) Figure 4. Total Wideband Noise Voltage BANDWIDTH = 10 Hz TO 15.7 kHz SMALL-SIGNAL CHARACTERISTICS 20 NF, NOISE FIGURE (dB) 10 8.0 10 A 10 T J = 25C C, CAPACITANCE (pF) 100 A 6.0 4.0 2.0 0 7.0 5.0 C ibo C obo I C = 1.0 mA 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 R S , SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure |h fe |, SMALL- SIGNAL CURRENT GAIN V R , REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance SMALL-SIGNAL CHARACTERISTICS 4.0 SMALL-SIGNAL CHARACTERISTICS 200 100 70 V CE = 5.0 V T J = 125C h FE , DC CURRENT GAIN 2.0 f = 100 MHz T J = 25C 50 30 20 10 7.0 5.0 3.0 2.0 25C 1.0 0.8 0.6 0.4 -55C V CE = 5.0 V 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain Figure 8. DC Current Gain WEITRON http://www.weitron.com.tw 3/5 21-Dec-07 MMBT6427 SMALL-SIGNAL CHARACTERISTICS V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 3.0 1.6 T J = 25C 2.5 T J = 25C 1.4 I C = 10 mA 50 mA 250 mA 500 mA 2.0 V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 1000 1.2 V BE(on) @ V CE = 5.0 V 1.0 1.5 1.0 0.8 V CE(sat) @ I C /I B = 1000 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 500 I B , BASE CURRENT (A) R V , TEMPERATURE COEFFICIENTS (mV/C) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region -1.0 Figure 10. "On" Voltages *APPLIES FOR I C / I B < h FE /3.0 *R VC FOR V CE(sat) 25C TO 125C FIGURE A -55C TO 25C t PP P -2.0 -3.0 PP 25C TO 125C -4.0 VB FOR V BE -5.0 -55C TO 25C t 1 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 1/f tP PEAK PULSE POWER = P P DUTY CYCLE =t 1 f = t1 I C , COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients Design Note: Use of Transient Thermal Resistance Data 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k D = 0.5 0.2 0.05 SINGLE PULSE RESISTANCE (NORMALIZED) r (t), TRANSIENT THERMAL 0.1 SINGLE PULSE Z JC(t) = r(t) * R JC T J(pk) - T C = P (pk) Z JC(t) Z JA(t) = r(t) * R JA T J(pk) - T A = P (pk) Z JA(t) t, TIME (ms) Figure 12. Thermal Response WEITRON http://www.weitron.com.tw 4/5 21-Dec-07 MMBT6427 SOT-23 Package Outline Dimensions A Unit:mm TOP VIEW B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 http://www.weitron.com.tw WEITRON 5/5 21-Dec-07 |
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